基于双栅极结构的低温多晶硅薄膜晶体管及其制备方法

Low-temperature polycrystalline silicon thin-film transistor based on dual-gate structure and preparation method thereof

Abstract

本发明公开了一种基于双栅极结构的低温多晶硅薄膜晶体管,以及一种形成双栅极结构的低温多晶硅薄膜晶体管的制备方法,包括:一基板;至少一图案化非晶硅层位于所述基板上的一阻隔层内,所述至少一图案化非晶硅层构成一底栅极;一N型金属氧化半导体,位于所述阻隔层上;以及一P型金属氧化半导体,位于所述阻隔层上;其中,所述N型金属氧化半导体成一图案化栅极电极层与所述至少一图案化非晶硅层形成的所述底栅极结合成双栅极结构,使电流-电压特性更加稳定,导通电流明显改善,驱动能力增加,降低功耗,提高产品良率。
The invention discloses a low-temperature polycrystalline silicon thin-film transistor based on a dual-gate structure and a preparation method of the low-temperature polycrystalline silicon thin-film transistor with the dual-gate structure. The low-temperature polycrystalline silicon thin-film transistor comprises a substrate; at least one patterning amorphous silicon layer which is arranged in the barrier layer of the substrate and forms a bottom-gate; an N-channel metal oxide semiconductor which is arranged on the barrier layer; and a P-channel metal oxide semiconductor which is located on the barrier layer, wherein the patterning gate electrode layer formed by the N-channel metal oxide semiconductor and the bottom-gate formed by at least one patterning amorphous silicon layer are combined to form dual-gate structure, so that the current-voltage characteristic is more stable and the breakover current is improved obviously; the driving capacity is increased, the power consumption is reduced and the yield rate of products is improved.

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