一种石墨相氮化硼纳米圆片及其胶体的制备方法

Preparation methods of graphite-phase boron nitride nano wafer and colloid thereof

Abstract

The invention discloses preparation methods of a graphite-phase boron nitride nano wafer and a colloid thereof, and belongs to the technical field of material preparation. The graphite-phase boron nitride nano wafer is synthesized conventionally at a high temperature, and other surface modifiers are not needed, so that an ultra-high-concentration graphite-phase boron nitride nano wafer colloid can be prepared, and can be further diluted according to practical needs. By adopting the preparation methods disclosed by the invention, the problems that graphite-phase boron nitride cannot be prepared into a high-concentration stable water-phase colloid, the preparation condition is relatively harsh and the cost is relatively high at present are solved, and the preparation methods are simple, low-price and easily-available in raw materials, low in environmental pollution and beneficial for large-scale industrial production, and have significant economical and social benefits.
本发明公开了一种石墨相氮化硼纳米圆片及其胶体的制备方法,属于材料制备技术领域。通过常规高温合成石墨相氮化硼纳米片,不需要其他表面修饰剂,可制备成超高浓度的石墨相氮化硼纳米片胶体,也可进一步根据实际需要对高浓度的胶体进行稀释。本发明解决了目前石墨相氮化硼不易制成高浓度且稳定的水相胶体、制备条件比较苛刻及成本较高等问题,制备方法简单、原料廉价易得、低环境污染、有利于大规模的工业生产,具备显著的经济和社会效益。

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